产品概述
The IRFR120NTRPBF is a HEXFET? fifth generation N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silICon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation level of 1.5W is possible in a typical surface-mount application.
Advanced process technology
Fully avalanche rating
Low static drain-to-source ON-resistance
Dynamic dV/dt rating
应用
产品信息
晶体管极性: N沟道 电流, Id 连续: 9.4A 漏源电压, Vds: 100V 在电阻RDS(上): 0.21ohm 电压 @ Rds测量: 10V 阈值电压 Vgs: 4V 功耗 Pd: 48W 晶体管封装类型: TO-252AA 针脚数: 3引脚 工作温度最高值: 175°C 产品范围: - 汽车质量标准: - MSL: MSL 1 -无限制