产品概述
The IPB107N20N3 G is a 200V N-channel Power MOSFET ideally suited for high-frequency switching, achieving excellent performance in applICations such as synchronous rectification for AC-DC SMPS and motor control. The OptiMOS? MOSFET is optimized for hard commutation ruggedness, achieving low Qrr and lower peak reverse recovery charges. It is performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems, DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives.
Highest efficiency
Highest power density
Lowest board space consumption
Minimal device paralleling required
System cost improvement
Environmentally-friendly
Easy to design in
应用
产品信息
晶体管极性: N沟道 电流, Id 连续: 88A 漏源电压, Vds: 200V 在电阻RDS(上): 0.0096ohm 电压 @ Rds测量: 10V 阈值电压 Vgs: 3V 功耗 Pd: 300W 晶体管封装类型: TO-263 针脚数: 3引脚 工作温度最高值: 175°C 产品范围: - 汽车质量标准: - MSL: MSL 1 -无限制